Study on piezoresistive effect of diamond films under magnetic field

摘要

The piezoresistive effect of P-type diamond films was investigated under magnetic field. The diamond films in these studies were synthesized by microwave plasma chemical vapor deposition. The experimental results have shown that the change in the resistance was about 12.0% without magnetic field when microstrain was 100 at room temperature, but decreased by 9.5% under the magnetic field of 3 T at tensile stress. The origin of the piezoresistive effect in P-type diamond films can be explained by the strain-induced valence band split-off and the magnetoresistive effect in the films that was caused by additional hole movement in a magnetic field. (C) 2003 Elsevier B.V. All rights reserved. [References: 11]