Anisotropic silicon trenches 300-500 μm deep employing time multiplexed deep etching (TMDE)

摘要

This paper reports solutions to the problem of profile control of narrow trenches in the vicinity of wider topographic features, as well as for etching high aspect ratio, anisotropic trenches with depths in the 300-500 μm range, and of widths between 12 to 18 μm. Additionally, specific operating conditions are discussed to address uniformity variations across dies with diameters in excess of 4200 μm.