Electrodeposition of photoresist: optimization of deposition conditions, investigation of lithographic processes and chemical resistance

摘要

Electrochemical photoresist deposition is a promising technique in patterning three-dimensional structures in anisotropically etched silicon cavities. This technology allows the fabrication of wafer through-hole interconnections, backside contacts to electrodes and transistors, and the development of new devices like conical coils and microrelays. To improve the resist properties like homogeneity and complete coverage of cavities, the chemical composition of the resist solution, deposition voltage, and time were varied. The lithographic steps exposure, development and stripping were optimized for pattern resolution. Different organic and alkaline solutions were investigated for their stripping suitability. Furthermore, the chemical resistance of several metals and oxides against etching solutions was evaluated.