The effects of deposition and annealing conditions on crystallographic properties of sputtered barium ferrite thick films

摘要

The development of devices combining a ferrite with a semiconductor chip is a major focus of current research and could make use of vacuum deposition techniques of magnetic films. Barium hexaferrite (BaFe12O19; BaM) thick films are deposited here using an rf non-reactive sputtering system. Because the as-deposited films are amorphous and non-magnetic, two kinds of post-deposition annealing are employed, which are referred to here as classic thermal annealing (CTA) and rapid thermal annealing (RTA). The effects of annealing conditions on the proper-ties of BaM films are studied using vibrating sample magnetometry NSM), scanning electron microscopy (SEM) with an EDX probe and X-ray diffractometry (XRD). The first results show a good stoichiometry of the layer and a crystallization above 800 degreesC. The magnetic properties are closed to that of the bulk BaM. Progress is still necessary to obtain a temperature more compatible with microelectronic technologies (below 500 degreesC). (C) 2002 Elsevier Science B.V.. All rights reserved. [References: 8]