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首页> 外文期刊>Sensors and Actuators, A. Physical >Fabrication of thermal-isolation structure for microheater elements applicable to fingerprint sensors
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Fabrication of thermal-isolation structure for microheater elements applicable to fingerprint sensors

机译:适用于指纹传感器的微加热器元件的热隔离结构的制造

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摘要

We are developing a fingerprint-sensor device that has one-dimensionally arrayed high-density microheater elements. To provide thermal isolation, we designed and fabricated two sets of insulation cavities for the heater elements, one to reduce the heat transferring from the heater elements to the substrate and the other one to reduce that of heat to the wiring. The insulation cavities in the first set are etched and laterally penetrate under the heater bridges, leaving a SiO2 diaphragm with the heater bridges on it. Those in the second set are etched lengthwise of each heater element, leaving a set of SiO2-wiring bridges over them. These SiO2-wiring bridges are used to perform metal-film wiring. The wiring (an electrical feed through) is formed using the lift-off method and running on the SiO2, film surface from the heater element to the bonding pad through the SiO2-wiring bridges; in this way, the amount of heat transferred to the wiring is reduced. The fabricated sensor device was made on a (1 0 0) silicon-on-insulator (SOI) wafer using micromachining technology. Each heater bridge was 5 mum x 17 mum x 50 mum with a pitch of 80 mum. Because of its small thermal capacity and effective thermal isolation, the sensor element is very sensitive. When a 0.4 V/20 mus pulse voltage was applied to the heater elements, their resistance reached a steady maximum value in about 4-5 mus, i.e. the temperature rise was saturated promptly. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 26]
机译:我们正在开发一种指纹传感器设备,该设备具有一维排列的高密度微型加热器元件。为了提供热隔离,我们设计和制造了两组用于加热器元件的绝缘腔,一组用于减少从加热器元件到基板的热量传递,另一组用于减少向布线的热量传递。第一组中的绝缘腔被蚀刻,并在加热器桥的下方横向渗透​​,留下带有加热器桥的SiO2隔膜。第二组中的那些沿每个加热器元件的长度方向进行蚀刻,从而在它们上方留下一组SiO2布线桥。这些SiO2接线桥用于执行金属膜接线。布线(电穿通)采用剥离法形成,并在SiO2膜表面上从加热器元件通过SiO2布线桥延伸至接合垫;以这种方式,减少了传递到布线的热量。使用微机械加工技术,在(1 0 0)绝缘体上硅(SOI)晶圆上制造了制造的传感器设备。每个加热器桥为5毫米x 17毫米x 50毫米,间距为80毫米。由于其小的热容量和有效的热隔离,传感器元件非常敏感。当对加热器元件施加0.4V /20μs的脉冲电压时,它们的电阻在约4-5μs内达到稳定的最大值,即,温度上升迅速饱和。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:26]

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