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首页> 外文期刊>Sensors and Actuators, A. Physical >Electro-deposition of Fe-Tb-O films with ac currents for use in high frequency micromagnetic devices
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Electro-deposition of Fe-Tb-O films with ac currents for use in high frequency micromagnetic devices

机译:用交流电电沉积Fe-Tb-O薄膜,用于高频微磁器件

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摘要

Electro-deposition of Fe-Tb-O films was attempted using ac currents with low frequency. The film composition, especially Tb content of films, was found to be sensitive to the concentration of complex agent, KNaC_(4)H_(4)O_(6): when KNaC_(4)H_(4)O_(6)=283.47 mM, plated films with very high Tb content reaching 29 at.% were obtained, in spite of the difficulty in electro-deposition of Tb owing to its very low catalytic activity. Coercivity H_(c) and squareness ratio M_(r)/M_(S) of films varied considerably depending strongly on the intensity of ac current i: when i=0.67 A/dm~(2), films with relatively soft magnetic properties of H_(c)=29O e and M_(r)/M_(s)=0.93 were realized.
机译:尝试使用低频交流电对Fe-Tb-O膜进行电沉积。发现膜组成,特别是膜的Tb含量对络合剂KNaC_(4)H_(4)O_(6)的浓度敏感:当KNaC_(4)H_(4)O_(6)= 283.47时以mM计,尽管由于Tb的催化活性很低而难以电沉积Tb,但仍获得具有高达29at。%的非常高的Tb含量的镀膜。薄膜的矫顽力H_(c)和矩形比M_(r)/ M_(S)在很大程度上取决于交流电流i的强度:当i = 0.67 A / dm〜(2)时,具有相对软磁特性的薄膜H_(c)= 29O e且M_(r)/ M_(s)= 0.93。

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