...
首页> 外文期刊>Sensors and Actuators, A. Physical >Noise considerations in low voltage CMOS integrated temperature sensors
【24h】

Noise considerations in low voltage CMOS integrated temperature sensors

机译:低压CMOS集成温度传感器中的噪声注意事项

获取原文
获取原文并翻译 | 示例
           

摘要

Ln this paper, we have investigated the noise characteristics of a low-voltage temperature sensor designed in standard CMOS technology. It looks like a traditional temperature sensitive Wheatstone bridge (fabricated using polysilicon resistors layers of positive and negative temperature coefficients), followed by a low-noise low-offset, low supply voltage differential amplifier, which improves the circuit sensitivity to about 20 mV/K. The temperature resolution is about 0.01 degrees. Noise considerations on suitable different OTA amplifiers are also presented and compared with other CMOS and bipolar temperature sensors. (C) 2000 Elsevier Science S.A. All rights reserved. [References: 25]
机译:在本文中,我们研究了采用标准CMOS技术设计的低压温度传感器的噪声特性。它看起来像传统的温敏惠斯通电桥(使用正负温度系数的多晶硅电阻器层制造),然后是低噪声,低失调,低电源电压的差分放大器,可将电路灵敏度提高至约20 mV / K 。温度分辨率约为0.01度。还介绍了适用于不同OTA放大器的噪声注意事项,并将其与其他CMOS和双极性温度传感器进行了比较。 (C)2000 Elsevier Science S.A.保留所有权利。 [参考:25]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号