Application of aluminum films as temperature sensors for the compensation of output thermal shift of silicon piezoresistive pressure sensors

摘要

Aluminum thin film resisors are proposed for use as temperature sensors for the compensation of the thermal sensitivity and offset shift of pressure sensor output. An experimental investigation of Al films with different thicknesses and heat treatment was carried out in order to optimize the electric parameters of such temperature resistors. It was found that films with a thickness 1.2 μm and thermal etched at 330℃ for 72 h have good long- 'time stability, a specific resistance of 2.85 μ# cm and a temperature coefficient of resistance of 4.33× 10↑(-3)/℃. The obtained results indicate that A1 resistors can be used in an electrical circuit for the ,passive temperature compensation of the thermal shift of pressure sensor output within a temperature range of up to 125℃. # 1998 Elsevier Science S.A. All rights reserved.