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Anisotropy of grain boundary energies as cause of abnormal grain growth in electroplated copper films

机译:电镀铜膜中异常晶粒生长的原因是晶界能的各向异性

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摘要

The dihedral angle distribution of electroplated (EP) Cu films is significantly broader than those of vapor-deposited films, which may indicate anisotropy of the grain boundary energies. Additives incorporated during EP are presumed to cause anisotropy in the grain boundary energy and abnormal grain growth during self-annealing.
机译:电镀(EP)Cu薄膜的二面角分布比气相沉积薄膜的二面角分布宽得多,这可能表明晶界能各向异性。据推测,在EP中加入的添加剂会导致自退火过程中晶界能的各向异性和异常晶粒的生长。

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