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Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

机译:生长完全由尺寸为3-5 nm的金刚石晶粒和高能晶界组成的碳薄膜的方法

摘要

An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm.;A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.
机译:一种超纳米晶金刚石(UNCD),其平均晶粒尺寸在3-5纳米(nm)之间,且不超过8%体积的金刚石的平均晶粒尺寸大于10 nm。在乙炔与氢的体积比大于0.35且小于0.85且余量为惰性气体的除He以外的惰性气体中乙炔和氢的蒸汽在at处经受适当量的裂解至少一些乙炔以形成具有3至5 nm的平均晶粒尺寸和不大于约8%体积的具有大于10 nm的平均晶粒尺寸的金刚石的UNCD膜。

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