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Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

机译:生长完全由尺寸为3-5 nm的金刚石晶粒和高能晶界组成的碳薄膜的方法

摘要

An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.
机译:一种平均晶粒度在3到5纳米(nm)之间的超纳米晶金刚石(UNCD),其体积百分比不超过8%的金刚石的平均晶粒度大于10 nm。还公开了一种制造UNCD膜的方法,其中除He以外的惰性气体中的乙炔和氢的蒸气为乙炔与氢的体积比大于0.35且小于0.85,其余为惰性气体。在适当量的能量下,将至少一些乙炔裂解,以形成平均粒径为3至5nm的UNCD膜,其中不大于约8体积%的平均粒径大于10nm的金刚石。

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