Bi-Ge-Sb-Sn-Te films for reversible phase-change optical recording

摘要

Bi-Ge-Sb-Sn-Te phase-change recording films (Films A-D) were prepared by the co-sputtering of Bi_(30)Ge_(10)Te_(60), Ge_(20)Sb_(80), Sb and Sn targets. The composition of the recording films was controlled by the dc power. The film composition, surface roughness and reflectivity were also closely related. Dynamic tests revealed that disks with Film C exhibited a low jitter value and a high modulation value after direct overwriting. Therefore, the composition of the recording film dominated the reversible recording properties of the phase-change optical disk.