Doped Ge-Sb-Te phase-change materials for reversible phase-change optical recording

摘要

Differently doped Ge-Sb-Te phase-change recording films were prepared by the individual dc magnetron sputtering of Sn_5Ge_3Sb_(72)Te_(20), In_5Ge_3Sb_(72)Te_(20), Ga_5Ge_3Sb_(72)Te_(20) and Bi_5Ge_3Sb_(72)Te_(20) targets. A close relationship was observed between surface roughness and reflectivity. The Ge-Sb-Te films doped with Bi showed the highest surface roughness and reflectivity. The phase-change optical disks with Bi-doped Ge-Sb-Te recording films showed the best overwriting characteristics. Therefore, the reversible recording properties of the phase-change optical disk were dominated by the composition of the recording film.