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Effect of pre-oxidation on the microstructure, mechanical and dielectric properties of highly porous silicon nitride ceramics

机译:预氧化对高度多孔氮化硅陶瓷的微观结构,力学和介电性能的影响

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Highly porous Si_3N_4 ceramics have been fabricated via freeze casting and sintering. The as-sintered samples were pre-oxidized at 1200-1400 °C for 15 min. The effect of pre-oxidation temperature on the microstructure, flexural strength, and dielectric properties of porous Si_3N_4 ceramics were investigated. As the pre-oxidation temperature increased from 1200 °C to 1400 °C, irstly, the flexural strength of the pre-oxidized specimens remained almost constant at 1200 °C, and then decreased to 14.2 MPa at 1300 °C, but finally increased to 25.6 MPa at 1400 °C, while the dielectric constant decreased gradually over the frequencies ranging from 8.2 GHz to 12.4 GHz. This simple process allows porous Si_3N_4 ceramics to have ultra-low dielectric constant and moderate strength, which will be feasible in broadband radome applications at high temperatures.
机译:高度多孔的Si_3N_4陶瓷是通过冷冻铸造和烧结制成的。烧结后的样品在1200-1400°C下预氧化15分钟。研究了预氧化温度对多孔Si_3N_4陶瓷微观结构,抗弯强度和介电性能的影响。首先,随着预氧化温度从1200°C升高到1400°C,预氧化试样的抗弯强度在1200°C时几乎保持恒定,然后在1300°C时降低到14.2 MPa,但最终增加到在1400°C时为25.6 MPa,而介电常数在8.2 GHz至12.4 GHz的频率范围内逐渐降低。这个简单的过程使多孔Si_3N_4陶瓷具有超低的介电常数和中等强度,这在高温下的宽带天线罩应用中将是可行的。

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