Electrical properties of (Zr,Ti)_(0.85)(Ca,Sr)_(0.15)O_(1.85) thin film grown on Pt/Ti/SiO_2/Si substrate using RF magnetron sputtering

摘要

Crystalline (Zr,Ti)_(0.85)(Ca,Sr)_(0.15)O_(1.85) (ZTCS) films were grown on a Pt/Ti/SiO_2/Si substrate at various temperatures by using rf-magnetron sputtering. The ZTCS films had a cubic stabilized zirconia structure. The dielectric constant (k) of the ZTCS film grown at 300℃ was approximately 30.5 with a low tan S value of 0.007 at 100 kHz. Further, this film exhibited a similar k value of 30.4 and a high quality factor of 225 at 1.0 GHz. Moreover, it showed a high capacitance density of 290 nF/cm~2 with a small TCC of -60.7 ppm/℃ at 100 kHz. A low leakage current (1.4×10~(-8) A/cm~2at 1.5 MV/cm) with a high breakdown electric field (1.85 MV/cm) was also observed in this film; the leakage current of this film was explained by Schottky emission. Therefore, it can be concluded that ZTCS films grown at low temperatures ( ≤300℃) are good candidates for use as embedded capacitor in printed circuit boards.