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Electronic Absorption Spectrum of Cs_(2)ZnI_(4) Thin Films

机译:Cs_(2)ZnI_(4)薄膜的电子吸收光谱

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The absorption spectrum of Cs_(2)ZnI_(4) thin films in the energy range 3-6 eV at temperatures from 90 to 340 K has been investigated. It is established that this compound belongs to direct-gap insulators. Low-frequency exciton excitations are localized in ZnI_(4) structural elements of the lattice. Phase transitions at 280 K (paraelectric phase reversible incommensurate phase), 135 K (incommensurate phase reversible monoclinic ferroelastic phase), and 96 K (monoclinic phase reversible triclinic ferroelastic phase) have been found from the temperature dependences of the spectral position and halfwidth of the low-frequency exciton band. Additional broadening of the exciton band is observed for ferroelastic phases; it is likely to be due to exciton scattering from strain fluctuations near domain walls.
机译:研究了Cs_(2)ZnI_(4)薄膜在90〜340 K温度范围内3-6 eV能量范围内的吸收光谱。已经确定该化合物属于直接间隙绝缘体。低频激子激发位于晶格的ZnI_(4)结构元素中。根据光谱位置和半峰宽的温度依赖性,发现了280 K(顺电相可逆不相称相),135 K(不相称相可逆单斜铁磁性相)和96 K(单斜相可逆三斜铁磁性相)的相变。低频激子带。对于铁弹性相,观察到激子带的进一步加宽。这可能是由于畴壁附近应变波动引起的激子散射所致。

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