Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation

摘要

We have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1 X 10~(15)/cm~(2) after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1 +- 0.4 dB/cm and 1.2 +- 0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowest reported loss for SOPS waveguides. This opens up new opportunities for all-silicon-based optoelectronics applications.