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首页> 外文期刊>Optics & Laser Technology >Determination of piezoelectric coefficients of ferroelectric thin films using GaAs : Cr adaptive interferometer
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Determination of piezoelectric coefficients of ferroelectric thin films using GaAs : Cr adaptive interferometer

机译:GaAs:Cr自适应干涉仪测定铁电薄膜的压电系数。

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We report on simple interferometric technique for the measurement of piezoelectric coefficients of thin films using GaAs:Cr adaptive photodetectors in the geometry of modified Mach-Zehnder interferometer. The technique needs no special vibroinsulation and automatically adjusts and keeps the operation point of the interferometer. Strong hysteresis effects with a slightly asymmetric form of the hysteresis loop were observed at the dependence of d(33) coefficients of the Pb(Zr, Ti)O-3 (PZT) thin film versus DC electric field. The obtained values of d33 coefficients are in agreement with known data. (C) 2003 Elsevier Ltd. All rights reserved. [References: 10]
机译:我们报告了一种简单的干涉技术,用于在改进的Mach-Zehnder干涉仪的几何结构中使用GaAs:Cr自适应光电探测器测量薄膜的压电系数。该技术不需要特殊的玻璃绝缘,并可以自动调整并保持干涉仪的工作点。在Pb(Zr,Ti)O-3(PZT)薄膜的d(33)系数对直流电场的依赖性下,观察到了具有稍微不对称形式的磁滞回线的强磁滞效应。 d33系数的获得值与已知数据一致。 (C)2003 Elsevier Ltd.保留所有权利。 [参考:10]

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