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The ferroelectric multilayer thin film structure using the difference of thermal expansion coefficient between ferroelectric layer and substrate for variable microwave device

机译:利用铁电层与可变微波器件的基板之间的热膨胀系数差异的铁电多层薄膜结构

摘要

The present invention relates to an electrical permittivity maximum variability structure to adjust the strain direction of the ferroelectric thin films using thermal mismatch as, more particularly, in the microwave device such as the variable phase shifters such as to change the phase or frequency during microwave transmission, to adjust the strain direction of the ferroelectric thin film using a thermal mismatch with the dielectric constant variation characteristic in accordance with the voltage applied to the electrical permittivity variability relates to maximize structural ; and the substrate electrically variable dielectric constant to adjust the strain direction maximize structure of the ferroelectric thin film using a thermal mismatch of the present invention is to take advantage of the dielectric constant variation characteristic in accordance with the voltage applied; And a ferroelectric thin film formed on the substrate; And a microwave transmission line is installed adjacent to one surface of the ferroelectric thin film; Installed adjacent to a ground line on the other surface of the ferroelectric thin film; in the multi-layer thin film structure comprising a one end of the substrate and the tension caused in the ferroelectric direction according to the thermal expansion coefficient difference between the ferroelectric thin film has a microwave transmission line and arranged to The other end of the tension direction is characterized in that made by placing a ground line. ; The present invention, by implementing a multi-layer thin film structure of the new structure, variable reproducibility than the ferroelectric element using the conventional MgO substrate or LAO substrate is high, and can greatly contribute to the variable type microwave device fabrication with a high variable characteristics. Phase converter and filter device to which the invention is applied also has an effect to significantly improve the transmission characteristics and is also very high dielectric loss reducing properties.
机译:本发明涉及一种介电常数最大可变性结构,该结构利用热失配来调节铁电薄膜的应变方向,尤其是在诸如可变移相器之类的微波装置中,以便在微波传输过程中改变相位或频率。根据施加到介电常数上的电压,利用具有介电常数变化特性的热不匹配来调节铁电薄膜的应变方向,使结构最大化;使用本发明的热失配来调整铁电薄膜的应变方向最大化结构的基板电可变介电常数,是利用根据施加电压的介电常数变化特性来进行的。在基板上形成铁电薄膜。在铁电薄膜的一个表面附近设置有微波传输线。安装在铁电薄膜另一面的接地线附近;在多层薄膜结构中,包括基板的一端和根据铁电薄膜之间的热膨胀系数差在铁电方向上引起的张力具有微波传输线并布置在该张力方向的另一端其特点是通过放置地线制成。 ;本发明通过实现新结构的多层薄膜结构,与使用常规的MgO衬底或LAO衬底的铁电元件相比,具有较高的可变再现性,并且可以极大地有助于具有高可变性的可变型微波器件的制造。特征。应用本发明的相转换器和滤波器装置还具有显着改善传输特性的效果,并且还具有非常高的降低介电损耗的特性。

著录项

  • 公开/公告号KR100659029B1

    专利类型

  • 公开/公告日2006-12-21

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20040030570

  • 发明设计人 한석길;차국린;

    申请日2004-04-30

  • 分类号H01P1/18;

  • 国家 KR

  • 入库时间 2022-08-21 20:39:41

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