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首页> 外文期刊>Thin Solid Films >Measurement of longitudinal piezoelectric coefficient of lead zirconate titanate thin/thick films using a novel scanning Mach-Zehnder interferometer
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Measurement of longitudinal piezoelectric coefficient of lead zirconate titanate thin/thick films using a novel scanning Mach-Zehnder interferometer

机译:使用新型扫描马赫曾德尔干涉仪测量锆钛酸铅薄膜/厚膜的纵向压电系数

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摘要

Developing a well accepted method for piezoelectric characterization of piezoelectric thin/thick films is an essential issue in the research of piezoelectric micro-electromechanical systems. This article presents a scanning interferometric technique for piezoelectric characterization of lead zirconate titanate (PZT) thin/thick film on silicon substrate. This technique is established using a newly developed scanning Mach-Zehnder interferometer with ultra-high resolution. The apparent longitudinal piezoelectric coefficients of both sol-gel derived PZT thin films and hybrid PZT thick films are measured using the scanning technique. The roles of several film processing factors on the piezoelectric properties of the resultant films are also discussed.
机译:在压电微机电系统的研究中,开发一种广为接受的压电薄膜压电特性的方法是必不可少的问题。本文介绍了一种扫描干涉技术,用于压电表征硅基板上的钛酸锆钛酸铅(PZT)薄膜/厚膜。该技术是使用新开发的具有超高分辨率的扫描马赫曾德尔干涉仪建立的。使用扫描技术测量溶胶-凝胶衍生的PZT薄膜和混合PZT厚膜的表观纵向压电系数。还讨论了几种膜处理因素对所得膜的压电性能的作用。

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