Nanoparticle-modified metal-oxide-silicon structure enhancing silicon band-edge electroluminescence to near-lasing action

摘要

With the insertion of SiO_(2) nanoparticles in the oxide layer, near-lasing actions such as threshold behavior and resonance modes are observed at the Si bandgap energy of metal-oxide-silicon (MOS) structure. The threshold current is ～12 mA. The SiO_(2) nanoparticles cause simultaneous localization of electrons and holes to enhance phonon-assisted radiative recombination. Electroluminescence at Si bandgap energy is increased to orders of magnitude larger than in similar MOS structures without SiO_(2) nanoparticles. The efficient light emission at the Si bandgap energy indicates that a direct bandgap nature is not necessarily the basic requirement for radiative recombination.