The responsivity of a type 6H-SiC photodiode in the 1.5-400 nm wavelength range was measured using synchrotron radiation. The responsivity was 0.20 A/W at 270 nm and was less than 0.10 A/W in the extreme ultraviolet (EUV) region. The responsivity was calculated using a proven optical model that accounted for the reflection and absorption of the incident radiation and the variation of the charge collection efficiency (CCE) with depth into the device. The CCE was determined from the responsivity measured in the 200-400 nm wavelength range. By use of this CCE and the effective pair creation energy (7.2 eV) determined from x-ray absorption measurements, the EUV responsivity was accurately modeled with no free parameters. The measured visible-light sensitivity, although low compared with that of a silicon photodiode, was surprisingly high for this wide bandgap semiconductor.
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机译：使用同步加速器辐射测量了1.5-400 nm波长范围内的6H-SiC型光电二极管的响应度。在270 nm处的响应度为0.20 A / W，在极紫外（EUV）区域则小于0.10 A / W。使用经过验证的光学模型计算响应度，该光学模型考虑了入射辐射的反射和吸收以及电荷收集效率（CCE）随设备深度的变化。根据在200-400 nm波长范围内测得的响应度确定CCE。通过使用此CCE和通过X射线吸收测量确定的有效对产生能量（7.2 eV），可以在没有自由参数的情况下准确模拟EUV响应度。对于这种宽带隙半导体，测得的可见光灵敏度虽然比硅光电二极管低，但出奇地高。
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