首页> 外国专利> ULTRA-WIDEBAND VACUUM TUNNEL PHOTODIODE FOR DETECTING ULTRAVIOLET, VISIBLE AND INFRARED OPTICAL RADIATION AND METHOD FOR PRODUCTION THEREOF

ULTRA-WIDEBAND VACUUM TUNNEL PHOTODIODE FOR DETECTING ULTRAVIOLET, VISIBLE AND INFRARED OPTICAL RADIATION AND METHOD FOR PRODUCTION THEREOF

机译:用于检测紫外线,可见光和红外光辐射的超宽带真空隧道光电二极管及其制造方法

摘要

FIELD: physics.;SUBSTANCE: invention can be used in designing ultra-wideband photodetectors in the ultraviolet (UV), visible and infrared region for optical spectroscopy and diagnosis, optical communication and imaging systems. The ultra-wideband vacuum tunnel photodiode, which detects optical radiation in the UV, visible and infrared region, is characterised by that the shape of the surface of the photoemitter is a 3D nano-gradient structure with a given gain coefficient of local electrostatic field strength, the distance between the photoemitter and the anode is in the micro- or nanometre range. The photodiode is based on an array of diode cells of planar-end autoemission structures with α-carbon edges. Also disclosed is a method of making the ultra-wideband vacuum tunnel photodiode in the UV, visible and infrared region, characterised by that the surface of the photoemitter, having a work function A, is in form of a 3D nano-gradient structure with a given gain coefficient of local electrostatic field strength β, the distance between the photoemitter and the anode is in the micro- or nanometre range, wherein the boundary value of voltage across the anode Umax, which corresponds to the maximum tunnel photoemissive current when detecting optical radiation with a given wavelength λ, is determined from a given relationship.;EFFECT: designing an ultra-wideband vacuum tunnel photodiode which enables to detect optical radiation in the UV, visible and infrared region using one nano-structured emitter with controlled, variable electrostatic field strength and the photoemission threshold.;3 cl, 7 dwg
机译:技术领域本发明可以用于设计用于光谱学和诊断,光学通信和成像系统的紫外(UV),可见和红外区域中的超宽带光电探测器。用于检测紫外线,可见光和红外线区域中的光辐射的超宽带真空隧道光电二极管的特征在于,光发射器表面的形状是具有给定局部静电场强度增益系数的3D纳米梯度结构。 ,光电发射体与阳极之间的距离在微米或纳米范围内。光电二极管基于具有α-碳边缘的平面端自动发射结构的二极管单元阵列。还公开了一种在UV,可见光和红外区域中制造超宽带真空隧道光电二极管的方法,其特征在于,具有功函数A的光发射体的表面为具有3D纳米梯度结构的形式。给定局部静电场强度β的增益系数,光发射极与阳极之间的距离在微米或纳米范围内,其中阳极上的电压边界值U max 对应于根据给定的关系确定检测给定波长λ的光辐射时的最大隧道光发射电流。效果:设计一种超宽带真空隧道光电二极管,该光电二极管能够使用一个纳米波长来检测UV,可见光和红外区域的光辐射。具有受控的可变电场强度和光发射阈值的结构化发射器; 3 cl,7 dwg

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