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Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors

机译:低损耗亚微米绝缘体上硅肋形波导和角镜

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摘要

Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width of 1 mum. Corner mirrors that allow compact 90degrees turns between two perpendicular waveguides are characterized. Measured propagation losses are similar to0.4 dB/cm and similar to0.5 dB/cm for 380-nm and 200-nm Si film, respectively, and mirror losses are similar to1 dB. This allows the development of applications such as optical interconnects in integrated circuits over propagation distances larger than several centimeters. (C) 2003 Optical Society of America. [References: 13]
机译:在绝缘体上硅衬底上演示了带肋微波波导,其硅膜厚度为380或200 nm,宽度为1 um。角镜可在两个垂直波导之间实现紧凑的90度转弯。对于380-nm和200-nm Si膜,测得的传播损耗分别接近0.4 dB / cm和0.5 dB / cm,镜面反射损耗接近1 dB。这允许开发诸如传播距离大于几厘米的集成电路中的光学互连之类的应用。 (C)2003年美国眼镜学会。 [参考:13]

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