Photorefractive multiple quantum wells at 1064 nm

摘要

We have fabricated photorefractive InGaAs/GaAs multiple quantum wells that are sensitive at wavelengths near 1.06 mum for what is believed to be the first time. We have measured four-wave-mixing diffraction efficiency, using a Nd:YAG laser. A maximum diffraction efficiency of 7 x 10(-4) and a cutoff grating period of similar to2 mum are obtained. (C) 2001 Optical Society of America OCIS codes: 160.5320, 160.6000, 190.5530. [References: 18]