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首页> 外文期刊>IEEE Photonics Technology Letters >Independence of absorption coefficient-linewidth product to material system for multiple quantum wells with excitons from 850 nm to 1064 nm
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Independence of absorption coefficient-linewidth product to material system for multiple quantum wells with excitons from 850 nm to 1064 nm

机译:激子从850 nm到1064 nm的多个量子阱的吸收系数-线宽积对材料系统的独立性

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摘要

The authors have measured the absorption coefficient ( alpha ) and linewidth ( Delta ) of the excitons of GaAs/AlGaAs and strain-balanced InGaAs/GaAsP multiple-quantum-well (MQW) modulators with wavelengths from 850 to 1064 nm. They find that alpha decreases and Delta increases as wavelength increases, but their product, and thus the integrated absorption coefficient, remains roughly constant. Thus, the reduced performance observed for longer wavelength modulators is due to exciton broadening.
机译:作者已经测量了波长为850至1064 nm的GaAs / AlGaAs和应变平衡InGaAs / GaAsP多量子阱(MQW)调制器的激子的吸收系数(α)和线宽(Delta)。他们发现随着波长的增加,α值降低而Delta值增加,但它们的乘积以及积分吸收系数保持大致恒定。因此,对于较长波长的调制器观察到的性能下降是由于激子展宽。

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