Deposition of the IV-VI Films by the Hot-Wall Method on Silicon Substrates 100 mm in Diameter

摘要

An experimental installation for the deposition of films of IV-VI compounds by the hot-wall method on silicon substrates 100 mm in diameter is described. The PbTe films on silicon wafers with orientation (100) are obtained and investigated. The PbTe films have a continuous mirror surface and repeat the substrate orientation. The peculiarities of obtaining such films are discussed.