Effect of a Transverse Applied Electric Field on Electron Drift Velocity in a GaAs Quantum Wire: A Monte Carlo Simulation

摘要

A Monte Carlo simulation is run to study the electron transport in a thin undoped GaAs quantum wire under the influence of a transverse applied electric field. Phonon and surface-roughness scattering are included. Electron drift velocity is investigated as a function of roughness amplitude at a temperature of 77 or 300 K and a longitudinal electric field of 10~4 or 10~5 V/m. A transverse applied field is shown to provide a means of controlling drift velocity, affecting the scattering rate.