Investigation of Electrical Properties of MOS Structures with Silicon Nitride Films Doped with Rare Earth Elements

摘要

One of the main problems of MOS devices in electronics is improving the stability of their characteristics. This problem is considered in this work. This solution is ensured by a decrease in the density of the surface states due to the use of silicon nitride films doped with rare earth elements as a tunneling and barrier layer and due to use of SiGe and Ge solid solutions as a storage medium of nanoclusters. CV-studies of the electrophysical parameters of MOS structures of Me-Si_3N_4 (rare earth elements)-Ge(SiGe)-Si_3N_4 (rare earth elements)-nSi nanoclusters, where rare earth elements with a different atomic radius are used as alloying components, are performed. The regularity of the influence of the atomic radius of rare earth elements on the electrical characteristics of MOS structures is revealed.