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A novel approach to prepare graphene oxide/soluble polyimide composite films with a low dielectric constant and high mechanical properties

机译:一种制备介电常数低,机械性能高的氧化石墨烯/可溶性聚酰亚胺复合薄膜的新方法

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摘要

This paper proposes an effective and simple approach to fabricate high-performance graphene oxide (GO)/soluble polyimide (SPI) composite films through a novel and effective process. In this method, GO is dispersed in a dissolved SPI (R-SPI) polymeric matrix with curing state, preventing the reduction of crosslinking reactions of the polymeric matrix, and resulting in substantial improvements in the mechanical and dielectric properties of the composite. The GO/R-SPI composite film contains only 1.0 wt% GO; it possesses high tensile strength (up to 288.6 MPa) and Young's modulus (7.58 GPa), which represent an increase of 260% in tensile strength and 402% in Young's modulus, compared with the neat SPI film (80.3 MPa and 1.51 GPa, respectively). The dielectric constant (D-k) decreases with an increase in the GO content; the D-k of the GO/R-SPI composite film can be as low as 2.1 (compared with 2.8 for the neat SPI film). This novel fabricating method provides a path for developing high-performance GO/R-SPI composite materials as next-generation low-k dielectric materials.
机译:本文提出了一种有效而简单的方法,通过一种新颖有效的方法来制备高性能氧化石墨烯(GO)/可溶性聚酰亚胺(SPI)复合薄膜。在这种方法中,GO以固化状态分散在溶解的SPI(R-SPI)聚合物基体中,防止了聚合物基体的交联反应减少,并导致复合材料的机械和介电性能得到实质性改善。 GO / R-SPI复合膜仅包含1.0 wt%的GO;它具有高拉伸强度(高达288.6 MPa)和杨氏模量(7.58 GPa),与纯SPI膜(分别为80.3 MPa和1.51 GPa)相比,抗张强度提高了260%,杨氏模量提高了402%。 )。介电常数(D-k)随着GO含量的增加而降低; GO / R-SPI复合膜的D-k可以低至2.1(纯SPI膜的2.8)。这种新颖的制造方法为开发高性能GO / R-SPI复合材料作为下一代低k介电材料提供了一条途径。

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