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Size dependence and UV irradiation tuning of the surface potential in single conical ZnO nanowires

机译:圆锥形ZnO纳米线的表面电势的尺寸依赖性和UV辐射调整

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Investigating and tailoring surface potential changes of a system at the interfaces is of significance in the fundamental understanding and application of semiconductor devices. Thus the surface potential of zinc oxide (ZnO) nanowires is a vital factor to tune the performance of devices. In this paper, Kelvin probe force microscopy (KPFM) is used to measure the surface potential of single conical ZnO nanowires with different diameters. A size dependence of the surface potential in single conical ZnO nanowires is experimentally revealed. As the diameter decreases, the surface potential of the ZnO nanowires is found to decrease linearly under 400 nm. At large diameters (>= 400 nm), the surface potential remains almost constant. The contact potential difference of the ZnO-PtIr tip increases to saturation after 40 min UV illumination and remains stable. An energy band theory is introduced to explore the surface potential change of ZnO nanowires under UV illumination. This study provides an understanding of the surface electrical properties of semiconductors at the nanoscale, which is valuable for optimizing functional nanodevices based on semiconductor nanowires.
机译:在半导体器件的基本理解和应用中,研究和调整界面处系统的表面电势变化具有重要意义。因此,氧化锌(ZnO)纳米线的表面电势是调节器件性能的重要因素。本文采用开尔文探针力显微镜(KPFM)测量具有不同直径的单根圆锥形ZnO纳米线的表面电势。实验揭示了单圆锥形ZnO纳米线中表面电势的大小依赖性。随着直径减小,发现ZnO纳米线的表面电势在400 nm以下呈线性下降。在大直径(> = 400 nm)下,表面电势几乎保持恒定。紫外线照射40分钟后,ZnO-PtIr尖端的接触电势差增加到饱和,并保持稳定。引入能带理论以探索ZnO纳米线在紫外线照射下的表面电势变化。这项研究提供了对纳米级半导体表面电学特性的理解,这对于优化基于半导体纳米线的功能纳米器件非常有价值。

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