Effects of stirring on the bulk etch rate of LR 115 detector

摘要

The effects of stirring on the bulk etch rate of LR 115 detector has been investigated. The surface profile measurement method using an instrument called Form Talysurf has been used to measure the thickness of the active layer of the LR 115 detectors. The etchant was 10% aqueous solution of NaOH maintained at 60degreesC. The bulk etch rate under magnetic stirring has been found to be 6.65 +/- 0.34 mum h(-1) and that under no stirring to be 3.61 +/- 0.14 mum h(-1). The initial thickness of the active layer before etching also varies. (C) 2003 Elsevier Science Ltd. All rights reserved. [References: 18]