Measurement of bulk etch rate of LR115 detector with atomic force microscopy

摘要

Equations for calculating track parameters have been proposed, which invariably involve the track etch rate V-t and the bulk etch rate V-b. The present study measured V-b for the LR115 solid-state nuclear track detector using atomic force microscopy (AFM). The detectors were partially masked using rubber cement and then etched in 2.5 N NaOH solution at 60degreesC for time periods ranging from 5 to 40 min. The rubber cement was then peeled off and cross-sectional images of the LR115 detectors were obtained by AFM. V-b has been found to have different values below and beyond the etching time of about 13.5 min, with the values of 0.0555 and 0.0875 mum min(-1) respectively. The increase in V-b with the etching time can be explained by a diffusion-etch model, in which the additional damage of the detector material is due to those etchant ions diffused into the detector over time. Now that V-b has been determined, this can be combined with the track etch rate V-t to calculate track parameters. (C) 2002 Elsevier Science Ltd. All rights reserved. [References: 17]