New era in electronics with single oxide p-n junction?

摘要

A group at North Carolina State University led by Jagdish Narayan says it has accomplished a major milestone by producing p-type conduction and n-type conduction in a single oxide material, which may open the door to power-tolerant oxide-based functional electronic devices. In a new paper in the Journal of Applied Physics, Narayan's group reports on some of the "systematic changes in structural, electrical and optical properties of NiO thin films on c-sapphire introduced by nanosecond ultraviolet excimer laser pulses."