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Different DC Response in Thickness and Lateral Field Excitation Film Bulk Acoustic Resonators

机译:厚度和横向场激励薄膜体声谐振器的不同直流响应

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This paper describes different DC response in Thickness Field Excitation (TFE) and Lateral Field Excitation (LFE) Film Bulk Acoustic Resonators (FBAR). As DC voltage was applied to TFE FBAR, the resonant frequency shifted linearly with a sensitivity of -4.5 ppm/V. This DC response was independent of temperature (from room temperature to 80 deg C). On the other hand, DC voltage did not have an apparent impact on the quality factor (Q). In the case of LFE FBAR, DC voltage cannot alter the resonant frequency. However, an enhanced Q was observed with increasing voltage. This was a result of the acoustoelectric amplification effect due to the lower acoustic velocity in LFE FBAR.
机译:本文介绍了厚度场激励(TFE)和横向场激励(LFE)薄膜体声谐振器(FBAR)中不同的DC响应。当将直流电压施加到TFE FBAR时,谐振频率以-4.5 ppm / V的灵敏度线性移动。该直流响应与温度无关(从室温到80摄氏度)。另一方面,直流电压对品质因数(Q)没有明显影响。在LFE FBAR的情况下,直流电压不能改变谐振频率。然而,随着电压的增加,观察到Q值增加。这是由于LFE FBAR中较低的声速而导致的声电放大效应的结果。

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