Resonant Raman scattering by 2LO-phonons in semiconductors with equal effective masses of electrons and holes

摘要

A theoretical treatment for the resonant second-order Raman scattering in semiconductors with equal effective masses of electrons and holes is presented. The Wannier excitons are considered as intermediate states. Expressions for the Raman efficiency are derived. The theoretical model developed can be applied for incident frequencies below and above an excitonic resonance. [References: 21]