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机译:
NTT Photonics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan;
机译:Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors
机译:Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack
机译:Heterodyne terahertz detection based on antenna-coupled AlGaN/GaN high-electron-mobility transistor
机译:A case study on the appropriate selection of optical ground wire
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:study On all-Optical signal processing by semiconductor Optical amplifiers for Ultra-High-speed Optical Fiber Communications
机译:用于GaN,GaN / alGaN和GaN / InGaN核壳纳米线中少数载流子扩散的无接触测量的传输成像。