机译:Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack
Shandong Jiaotong Univ;
Shandong Univ;
Hebei Semicond Res Inst;
AlGaN; GaN MIS-HEMTs; Two-dimensional electron gas; Additional polarization charges; Electron mobility; Parasitic resistance;