Hot electron spin polarization and Schottky barrier in spin-valve transistor

摘要

We have explored phenomenological temperature dependence of hot electron magnetotransport in a spin valve transistor. We stress spin polarization of hot electrons and spatial inhomogeneity of Schottky barriers to explain the peculiar temperature and spin dependence of collector currents. Qualitative trends are established for collector current with changes in temperature, thickness of spin-valve base, along with height and width of Schottky barriers.