机译:退火后Al/Ti触点对p型4H-SiC的欧姆行为机理
School of Electrical and Computer Engineering, Purdue University, 465 Northwestern Avenue, West Lafayette, Indiana 47907;
机译:Annealing temperature dependent properties for Ni/Ti/W Ohmic contacts simultaneously formed on n- and p-type 4H-SiC
机译:Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC
机译:Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN
机译:Ni-Al-Ti Ohmic接触inal植入4h-sic
机译:从航天飞机哥伦比亚意外恢复的亚结构Ti-6AL-4V,Inconel 718,A-286和Al 2024组件对亚结构Ti-6Al-4V,Inconel 718,A-286和Al 2024组件进行了对大气再进入暴露的研究
机译:离心力作用下Al-Al3Ti / Ti3Al功能梯度材料的制备
机译:低阻Ti / Al Ohmic接触未掺杂的ZnO
机译:二级标准实验室交叉检验程序CR-02标准电阻NBs类型1 OHm至100,000 OHms(使用L&N 4232-aL桥)