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机译:
Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261;
rovidence.org;
机译:Controllable capacitance-voltage hysteresis width in the aluminum-cerium-dioxide-silicon metal-insulator-semiconductor structure: Application to nonvolatile memory devices without ferroelectrics
机译:Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures
机译:Nonvolatile Memory Effect in a Au/Cu–ZnO/p-Si Type of Metal–Insulator–Semiconductor Structure
机译:A-Si:H TFT Nonvolatile Memories和刚性和柔性电子的铜互连
机译:分层相变的特殊性 ferroelectrics-semiconductors $ TlIn_ {1-x} Fe_xs_2 $
机译:研究自对准,应变通道,N + -Inas / al sub 0.5 Ga sub 0.5 as / In sub 0.15 Ga sub 0.85 as semiconductor Insulator semiconductor FET(sIsFET)