A RuO2/Pb(Zr0.52Ti0.48)O3/RuO2 metal-insulator-metal device using the sol-gel spin coating method

摘要

RuO 2 /Pb(Zr 0.52 Ti 0.48 )O 3/ RuO 2 metal-insulator-metal device, the device comprising: a barrier layer of a thin Ti layer deposited on a SiO 2 /Si substrate; a bottom electrode made of a RuO 2 thin film deposited on the barrier layer by reactive DC sputtering; a Pb(Zr 0.52 Ti 0.48 )O 3 thin film spin-coated on the bottom electrode; and a RuO 2 thin film top electrode deposited through a shadow mask on the Pb(Zr 0.52 Ti 0.48 )O 3 thin film.