Redox-based nanoionic resistive memory cells are one of the most promising emergingnanodevices for future information technology with applications for memory, logic andneuromorphic computing. Recently, the serendipitous discovery of the link between redoxbasednanoionic-resistive memory cells and memristors and memristive devices has furtherintensified the research in this field. Here we show on both a theoretical and an experimentallevel that nanoionic-type memristive elements are inherently controlled by non-equilibriumstates resulting in a nanobattery. As a result, the memristor theory must be extended to fitthe observed non-zero-crossing I–V characteristics. The initial electromotive force of thenanobattery depends on the chemistry and the transport properties of the materials systembut can also be introduced during redox-based nanoionic-resistive memory cell operations.The emf has a strong impact on the dynamic behaviour of nanoscale memories, and thus, itscontrol is one of the key factors for future device development and accurate modelling.
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