Structural, Optical, Photoelectrochemical Characteristics of p-Type Sb-Doped AgInS2 Thin Films Prepared by Chemical Bath Deposition Process

摘要

In this study, p-type Sb-doped AgInS2 thin films were prepared on indium-tin oxide (ITO) glass substrates via chemical bath deposition (CBD) process. Various Sb-doped AgInS2 thin films, with varying Sb concentration (0.2, 0.4, 0.6, and 0.8 mM) were prepared. We found the 0.6 mM Sb-doped AgInS2 film had the highest photoelectrochemical performance with photocurrent density of -1.22 mA/cm(2) bias -1.5 V versus SCE reference electrode under a 300 W Xe lamp illumination with the intensity of 100 mW/cm(2). This value was about 4 times higher than the 0.2 mM Sb-doped AgInS2 film. Enhanced photocurrent density was likely the result of the higher charge carrier density introduced by Sb dopant.