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首页> 外文期刊>Nanoscience and Nanotechnology Letters >Nanoflakes of W/WO3 Thin Films Grown by Electrochemical Anodization Method
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Nanoflakes of W/WO3 Thin Films Grown by Electrochemical Anodization Method

机译:电化学阳极氧化法生长W / WO3薄膜的纳米薄片

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摘要

To the best of our knowledge there are no reports about synthesizing the tungsten oxide (WO3) nanosflakes patterns on metallic tungsten (W) foil substrate. WO3 nanosflakes was successfully synthesized on the metallic tungsten foil via electrochemical wet etching method. Metallic tungsten foil was used as substrates in this technique. Without using any templates and catalysts, the selforganized W/WO3 nanoflakes can be obtained by simple electrochemical anodization of tungsten foil in 0.5 M NaF solution as the supporting electrolyte, applying a ramp potential of 20 V. The etching duration are 1, 2, and 3 hours at room temperature. After etching, the as-prepared products were characterized by scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD).
机译:据我们所知,没有关于在金属钨(W)箔基板上合成氧化钨(WO3)纳米片图案的报道。通过电化学湿法刻蚀成功地在金属钨箔上合成了WO3纳米片。在该技术中,金属钨箔用作衬底。在不使用任何模板和催化剂的情况下,可以通过在0.5 M NaF溶液中作为支撑电解质,对钨箔进行简单的电化学阳极氧化,施加20 V的斜坡电位,从而获得自组织的W / WO3纳米薄片。蚀刻时间为1、2和在室温下3小时。蚀刻后,通过扫描电子显微镜(SEM),能量色散X射线分析(EDX)和X射线衍射(XRD)对所制备的产品进行表征。

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