Fabrication of Colloidal InGaN/GaN Quantum Dots from Epitaxially Grown Quantum Wells

摘要

GaN colloidal quantum dots (QDs) containing InGaN multiple-quantum wells were fabricated by using electrochemical etching to lift-off nanocrystals from a substrate. The QDs were characterized by photoluminescence, which exhibited strong single-peak emission and significant blue-shift. This study enabled the construction of high-quality versatile heterojunctions in a colloidal QD for improved efficiency and functionality.