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Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide

机译:空间电荷掺杂的几层二硫化钼中二维超导的开始

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Atomically thin films of layered materials such as molybdenum disulfide (MoS2) are of growing interest for the study of phase transitions in two-dimensions through electrostatic doping. Electrostatic doping techniques giving access to high carrier densities are needed to achieve such phase transitions. Here we develop a method of electrostatic doping which allows us to reach a maximum n-doping density of 4 x 10(14) cm (-2) in few-layer MoS2 on glass substrates. With increasing carrier density we first induce an insulator to metal transition and subsequently an incomplete metal to superconductor transition in MoS2 with critical temperature approximate to 10 K. Contrary to earlier reports, after the onset of superconductivity, the superconducting transition temperature does not depend on the carrier density. Our doping method and the results we obtain in MoS2 for samples as thin as bilayers indicates the potential of this approach.
机译:层状材料(例如二硫化钼(MoS2))的原子薄膜对于研究通过静电掺杂进行二维相变具有越来越大的兴趣。需要获得高载流子密度的静电掺杂技术来实现这种相变。在这里,我们开发了一种静电掺杂方法,该方法使我们能够在玻璃基板上的几层MoS2中达到4 x 10(14)cm(-2)的最大n掺杂密度。随着载流子密度的增加,我们首先在临界温度接近10 K的MoS2中引起绝缘体向金属的转变,然后引起不完全的金属向超导体的转变。与早先的报道相反,在超导性开始之后,超导转变温度并不依赖于载流子密度。我们的掺杂方法和我们在MoS2中获得的样品(如双层薄的样品)表明了这种方法的潜力。

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