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Mid-infrared HgTe colloidal quantum dot photodetectors

机译:中红外HgTe胶体量子点光电探测器

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摘要

Today's infrared imaging devices are based on bulk and quantum-confined epitaxial materials and would benefit greatly from higher operating temperatures and lower cost. Imaging chips based on colloidal quantum dot technology could offer a convenient lower-cost alternative, but, to date, the spectral range of operation of colloidal quantum dots has been limited. In this Letter, we report colloidal HgTe quantum dot photodetectors with a room-temperature photoresponse beyond 5? ? μm, the longest interband absorption wavelength reported so far for colloidal materials. The photodetectors are fabricated from colloidal solutions, which are then drop-cast as thin films on electrodes. Operation covering the important atmospheric mid-wavelength infrared transparency window between 3 and 5? ? μm is demonstrated.
机译:当今的红外成像设备基于块状和量子限制的外延材料,将从更高的工作温度和更低的成本中受益匪浅。基于胶体量子点技术的成像芯片可以提供一种方便的低成本替代方案,但是迄今为止,胶体量子点的操作光谱范围受到限制。在这封信中,我们报告了室温下光响应超过5?的胶体HgTe量子点光电探测器。 ? μm,是迄今为止报道的胶体材料的最长带间吸收波长。光电探测器由胶体溶液制成,然后将其滴铸成薄膜在电极上。覆盖重要的大气中波长红外透明度窗口(3至5)的操作? ?演示了μm。

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