Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well

摘要

We demonstrate the variations of the photoluminescence (PL) spectral peak position and intensity through the surface plasmon (SP) coupling with an InGaN/GaN quantum well (QW) by forming Ag nanostructures of different scale sizes on the QW structure with thermal annealing. By transferring an Ag thin film into a nanoisland structure, we can not only enhance the PL intensity, but also adjust the SP dispersion relation and hence red-shift the effective QW emission wavelength. Such an emission spectrum control can be realized by initially coating Ag films of different thicknesses. Although the screening process of the quantum-confined Stark effect, which can result in PL spectrum blue-shift and intensity enhancement, also contributes to the variations of the emission behaviour, it is found that the SP-QW coupling process dominates in the observed phenomena.