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Structure and electronic properties of self-assembled Pt silicide nanowires on Si(100)

机译:Si(100)上自组装Pt硅化物纳米线的结构和电子性能

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We investigated the formation of Pt silicide nanowires on a Si(100) surface using scanning tunnelling microscopy and high-resolution photoemission spectroscopy. Pt silicide nanowires with a tetragonal Pt2Si structure are formed along the step edges of Si(100). Pt-induced c(4 x 2) reconstructions also appear adjacent to the tetragonal Pt2Si nanowires. Formation of the Pt2Si nanowires is attributed to the anisotropic lattice mismatches between the tetragonal Pt2Si structure and Si(100). Scanning tunnelling spectroscopy data show that the nanowires are metallic. The stoichiometry of Pt silicide is confirmed by high-resolution photoemission spectroscopy.
机译:我们研究了使用扫描隧道显微镜和高分辨率光发射光谱法在Si(100)表面上形成Pt硅化物纳米线的过程。沿着Si(100)的台阶边缘形成具有四方Pt2Si结构的Pt硅化物纳米线。 Pt诱导的c(4 x 2)重建也出现在四边形的Pt2Si纳米线附近。 Pt2Si纳米线的形成归因于四方Pt2Si结构与Si(100)之间的各向异性晶格失配。扫描隧道光谱数据表明,纳米线是金属的。硅化铂的化学计量通过高分辨率光发射光谱法确认。

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